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Catalin Palade, Adrian Slav, Ionel Stavarache, Valentin Adrian Maraloiu, Catalin Negrila and Magdalena Lidia Ciurea
The high-k-based MOS-like capacitors are a promising approach for the domain of non-volatile memory devices, which currently is limited by SiO2 technology and cannot face the rapid downsizing of the electronic device trend. In this paper, we prepare MOS-...
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