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Maria N. Koryazhkina, Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry S. Korolev, Alexander V. Kruglov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, David I. Tetelbaum, Alexey N. Mikhaylov, Sergey A. Shchanikov, Sungjun Kim and Bernardo Spagnolo
Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based on th...
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Fernando Leonel Aguirre, Nicolás M. Gomez, Sebastián Matías Pazos, Félix Palumbo, Jordi Suñé and Enrique Miranda
In this paper, we extend the application of the Quasi-Static Memdiode model to the realistic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) intended for large dataset pattern recognition. By considering ex-situ traini...
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Junhyeok Choi and Sungjun Kim
In this work, we present the nonlinear current?voltage (I?V) characteristics of a complementary resistive switching (CRS)-like curve from a HfAlOx-based memristor, used to implement a high-density cross-point array. A Pt/HfAlOx/TiN device has lower on-cu...
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Chih-Yi Liu, Chun-Hung Lai, Chao-Cheng Lin and Chih-Peng Yang
A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, i...
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