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M. Bakowski, J. Lang, J-K. Lim, J. Hellén, T.M.J. Nilsson, B. Schodt, R. Poder, I. Belov, P. Leisner
Pág. 157 - 165
The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. T...
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