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Yuwen Huang, Xiaoping Xie, Zeyulin Zhang, Peng Dong, Zhe Li, Dazheng Chen, Weidong Zhu, Shenglei Zhao, Qian Feng, Jincheng Zhang, Chunfu Zhang and Yue Hao
The vertical heterojunction Ga2O3 MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the p-type oxide as the current-blocking layer (CBL) is investigated for the first time using SILVACO simulation software. The results show that the thresho...
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Haiyan Ren, Xiaoping Zou, Jin Cheng, Tao Ling, Xiao Bai and Dan Chen
The hole blocking layer plays an important role in suppressing recombination of holes and electrons between the perovskite layer and fluorine-doped tin oxide (FTO). Morphological defects, such as cracks, at the compact TiO2 hole blocking layer due to rou...
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