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Dae-Seop Byeon, Choonghee Cho, Dongmin Yoon, Yongjoon Choi, Kiseok Lee, Seunghyun Baik and Dae-Hong Ko
Conventional Si or SiGe epitaxy via chemical vapor deposition is performed at high temperatures with a large amount of hydrogen gas using silane (SiH4) or dichlorosilane (SiCl2H2) precursors. These conventional precursors show low growth rates at low tem...
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Samra Saleem, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed and Muhammad Asghar
To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can ...
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Markus Scherrer, Noelia Vico Triviño, Svenja Mauthe, Preksha Tiwari, Heinz Schmid and Kirsten E. Moselund
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrat...
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Elena Alexandra Serban, Aditya Prabaswara, Justinas Palisaitis, Per Ola Åke Persson, Lars Hultman, Jens Birch and Ching-Lien Hsiao
Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiNx masks. ...
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