|
|
|
|
|
Tuung Luoh, Yu-Kai Huang, Yung-Tai Hung, Ling-Wuu Yang, Ta-Hone Yang and Kuang-Chao Chen
Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used as d...
ver más
|
|
|
|
|
|
|
|
|
|
|
Md Rabiul Islam, Md Kamrul Hasan, Md Abdul Mannan, M Tanseer Ali, Md Rokib Hasan
Pág. 73 - 80
s-
|
|
|
|
|
|
|
|
|
|
|
Chao Zhao and Jinjuan Xiang
Metal gate of CMOS devices.
|
|
|
|
|
|
|
|
|
|
|
Hsiao-Hsuan Hsu, Hsiu-Ming Liu and Sheng Lee
In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor. The higher leaka...
ver más
|
|
|
|
|
|
|
|
|
|
|
Kitae Lee, Sihyun Kim, Daewoong Kwon and Byung-Gook Park
Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations. Recently, wafer-l...
ver más
|
|
|
|
|
|
|
|
|
|
|
Jee-Hun Jeong, Ogyun Seok and Ho-Jun Lee
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping concentr...
ver más
|
|
|
|
|
|
|
|
|
|
|
Wael Deabes
This paper presents the hardware implementation of a stand-alone Electrical Capacitance Tomography (ECT) system employing a Field Programmable Gate Array (FPGA). The image reconstruction algorithms of the ECT system demand intensive computation and fast ...
ver más
|
|
|
|
|
|
|
|
|
|
|
Baek-Ju Lee, Kyu-Beom Lee, Min-Ho Cheon, Dong-Won Seo and Jae-Wook Choi
In this study, we conducted research on manufacturing molybdenum (Mo) thin films by a thermal atomic layer deposition method using solid MoO2Cl2 as a precursor. Mo thin films are widely used as gate electrodes and electrodes in metal-oxide semiconductor ...
ver más
|
|
|
|
|
|
|
|
|
|
|
Eitan N. Shauly and Sagee Rosenthal
The continuous scaling needed for higher density and better performance has introduced some new challenges to the planarity processes. This has resulted in new definitions of the layout coverage rules developed by the foundry and provided to the designer...
ver más
|
|
|
|
|
|