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Mahesh B. Manandhar and Mohammad A. Matin
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material wit...
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Algan Tezel, Esra Dobrucali, Sevilay Demirkesen and Isik Ates Kiral
Construction is a hazardous industry. The project-based nature and fragmentation in the industry lead to change and uncertainty requiring special expertise. To handle those, construction firms must develop strategies and action plans along with the exper...
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Elif Sertel, Raziye Hale Topaloglu, Betül Salli, Irmak Yay Algan and Gül Asli Aksu
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Chunyan Song, Xuelin Yang, Panfeng Ji, Jun Tang, Shan Wu, Yue Xu, Ali Imran, Maojun Wang, Zhijian Yang, Fujun Xu, Xinqiang Wang, Weikun Ge and Bo Shen
The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are...
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Sayed Muhammod Baker, Rinku Basak
Pág. 89 ? 94
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Rejaul Islam, S M Sajjad Hossain Rafin and Osama A. Mohammed
Emerging electric vehicle (EV) technology requires high-voltage energy storage systems, efficient electric motors, electrified power trains, and power converters. If we consider forecasts for EV demand and driving applications, this article comprehensive...
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