|
|
|
|
|
Shichao Zhao, Jiaxin Weng, Shengzhong Jin, Yanfei Lv and Zhenguo Ji
Molybdenum disulfide (MoS2) layers show excellent optical and electrical properties and have many potential applications. However, the growth of high-quality MoS2 layers is a major bottleneck in the development of MoS2-based devices. In this paper, we re...
ver más
|
|
|
|
|
|
|
|
|
|
|
Yanfei Lv, Feng Huang, Luxi Zhang, Jiaxin Weng, Shichao Zhao and Zhenguo Ji
Tungsten disulfide (WS2) monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it e...
ver más
|
|
|
|
|
|
|
|
|
|
|
Luana Mazzarella, Anna B. Morales-Vilches, Lars Korte, Rutger Schlatmann and Bernd Stannowski
Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualit...
ver más
|
|
|
|
|
|