Resumen
Pd-F:SnO2 thin films have been prepared by spray pyrolysis technique. Optimization has been done by doping SnO2 with palladium at varying levels of concentration and then recording sheet resistance. The sheet resistivity has been observed to decrease gradually as at% Pd concentration is increased; an optimum sheet resistivity value of 2.71 × 10-2 ? cm has been recorded. The decrease in sheet resistivity has been attributed to presence of Pd ions which contribute in increment of charge carrier density. Using the optimum value of at% Pd doping, the same procedure has been repeated to study the effect of fluorine on Pd:SnO2; an optimum value of 1.64 × 10-4 ? cm sheet resistivity has been recorded. This decrease has been attributed to substitution of O- with those of fluorine hence improving charge carrier density. The effect of passivation has been studied by comparing as prepared, annealed and passivated Pd-F:SnO2 thin films. Annealing has been observed to decrease the sheet resistivity to 1.21 × 10-4 ? cm, while passivation has the effect of increasing the sheet resistivity to 1.53 × 10-4 ? cm which is attributed to effects resulting from annealing the samples in nitrogen gas atmosphere.